Google Scholar|
2021
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54. Dong Gun Kim, Cheol Hyun An, Sang Hyeon Kim, Dae Seon Kwon, Junil Lim, Woojin Jeon,* and Cheol Seong Hwang*, "Optimized Al-doped TiO 2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate" Journal of Materials Chemistry C 9(5), 1572 (Jan. 2021) / Highlighted in front cover. [link]
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2020
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52. Youngjin Kim, Minsung Kim, Jong Hyuk Park, Keun-Young Shin, Sang-Soo Lee*, Woojin Jeon*, "Highly sustainable mechanical/electrical resistance switching behaviors via one-dimensional Ag/TiO2 core-shell resistive switchable materials in flexible composite" Organic Electronics 88, 105968 (Nov. 2020) [link]
51. Youngjin Kim, Minsung Kim, Ji Hyeon Hwang, Tae Whan Kim, Sang-Soo Lee*, Woojin Jeon*, "Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@ Titania core–shell wires" Scientific Reports 10, 18830 (Nov. 2020) [link]
49. Younjin Jang, Jun Shik Kim, Sukin Kang, Jihun Kim, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Heenang Choi, Nayeon Kim, Taeyong Eom, Taek-Mo Chung, Woojin Jeon, Sang Yoon Lee, Cheol Seong Hwang*, "Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics" Physica status solidi (RRL)–Rapid Research Letters 14, 2000304 (Oct. 2020) [link]
48. Byung Jun Kim, Sungho Park, Tae Yeon Kim, Eui Young Jung, Jong-Am Hong, Beom-Su Kim, Woojin Jeon, Seong Jun Kang*, "Improving the photoresponsivity and reducing the persistent photocurrent effect of visible-light ZnO/quantum-dot phototransistors via a TiO2 layer", Journal of Materials Chemistry C 8, 16384 (Sep. 2020) [link]
47. Yeonchoo Cho§, Sanghyeon Kim§, Byung Seok Kim§, Youngjin Kim, Woojin Jeon*, "Modulation of the adsorption chemistry of precursor in atomic layer deposition to enhance the growth per cycle of TiO2 thin film", Physical Chemistry Chemical Physics (in press) §These authors are equally contributed to this work. [link]
46. Wan-Ho Choi, Woojin Jeon*, Jin-Seong Park*, "Nanoscale surface engineering of a high-k ZrO2/SiO2 gate insulator for a high performance ITZO TFT via plasma-enhanced atomic layer deposition", Journal of Materials Chemistry C 8, 13342 (Aug. 2020) [link]
45. Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Junil Lim, Woojin Jeon*, Cheol Seong Hwang*, “Atomic layer deposition of Ru thin films using (2, 4-dimethyloxopentadienyl)(ethylcyclopentadienyl) Ru and the effect of ammonia treatment during the deposition” Journal of Materials Chemistry C 8, 6993 (Jun. 2020) [link]
44. Youngjin Kim§, Woojin Jeon§, Minsung Kim, Jong Hyuk Park, Cheol Seong Hwang*, and Sang-SooLee*, “Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite” Applied Materials Today 19, 100569 (Jun. 2020) §These authors are equally contributed to this work. [link]
43. Wan-Ho Choi, MinJung Kim, Woojin Jeon*, and Jin-Seong Park*, “Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors” AIP Advances 10, 015239 (Jan. 2020) [link]
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2019
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42. [REVIEW] Woojin Jeon*, “Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications” Journal of Materials Research 35(7), 775 (Apr. 2020) [link]
41. Soon Hyung Cha, Cheol Hyun An, Seong Tak Cho, Dong-Gun Kim, Dae Seon Kwon, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang*, “Scaling the equivalent oxide thickness by employing a TiO2 thin film on a ZrO2-Al2O3-based dielectric for the further scaling of the dynamic random access memory” Physica Status Solidi RRL 13(10), 1900282 (Oct. 2019) [link]
40. Cheol Hyun An, Woojin Jeon, Sang Hyeon Kim, Cheol Jin Cho, Dae Seon Kwon, Dong Gun Kim, Woongkyu Lee*, Cheol Seong Hwang*, “Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas” Journal of Physical Chemistry C 123(36), 22539 (Aug. 2019) [link]
39. MinJung Kim, Hyun-Jun Jeong, Jiazhen Sheng, Wan-Ho Choi, Woojin Jeon*, and Jin-Seong Park*, “The impact of plasma-enhanced atomic layer Deposited ZrSiOx insulators on low voltage operated in-Sn-Zn-O thin film transistors” Ceramics International 45(15), 19166 (Oct. 2019) [link]
38. Ju-Hwan Han, Su Ho Lim, Jin-Myung Choi, Seong-Hyeon Lee, Woojin Jeon*, and Jin-Seong Park*, “Optimization of a SiOx/SiNxOyCz multilayer structure for a reliable gas diffusion barrier via low-temperature plasma-enhanced atomic layer deposition” Ceramics International 45(6), 7407 (Apr. 2019) [link]
37. Wan-Ho Choi, Jiazhen Sheng, Hyun-Jun Jeong, Jin-Seong Park*, MinJung Kim, and Woojin Jeon*, “Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator”Journal of Vacuum Science & Technology A37(2), 020924 (Mar. 2019) [link]
36. Cheol Hyun An, Woongkyu Lee, Sang Hyeon Kim, Cheol Jin Cho, Dong-Gun Kim, Dae SeonKwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Woojin Jeon,* and Cheol Seong Hwang*,"Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition" Physica Status Solidi RRL 13(3), 1800454, (Mar 2019) [link]
35. Woojin Jeon,* Olivier Salicio, Ahmad Chaker, Patrice Gonon, and Christophe Vallée, "Controlling the Current Conduction Asymmetry of HfO₂ Metal-Insulator-Metal Diodes by Interposing Al₂O₃ Layer" IEEE Transactions on Electron Devices 66(1), 402-406 (Jan. 2019) [link]
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