Welcome to L'ete @ Kyung Hee Univ.
경희대 정보전자신소재공학과 전자재료연구실(Lab. of Electronic-Materials Tech. & Eng., L'ete)에서는 DRAM, Flash memory 등 메모리 반도체에서부터 2D 재료 등 차세대 반도체 재료의 물성 및 증착 공정, 이를 활용한 새로운 소자 개발에 대한 연구를 수행하고 있습니다.

Research Interests
Semiconductor Materials
  • Evaluating physical and electrical properties of high-k (Al2O3, ZrO2, HfO2, TiO2...) and 2D materials (Graphene, MoS2...) 
  • Novel material and devices development by organic-inorganic hybridization
  • Device physics especially on dielectric and interface between dielectric and metal
Electronic Devices
  • Novel FETs fabrication with 2D (graphene, TMDCs, …) and high-k materials
  • Extremely low power-consumption technology of semiconductor for IoT
  • Flexible and transparent system for wearable device application
  • Next-generation memory applications (DRAM, Flash memory, resistance-switching memory...)​​
Thinfilm Deposition Techniques
  • Deposition process evaluation with atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD) techniques for its device applications

Latest News & Announcement

23 Sep. 2020 | 
Prof. Jeon was appointed a new editorial board member of the "electronic materials".
5 Aug. 2020 | 
New member, Mr. LEE, Dae Cheol, joins to l'ete. Welcome! 
​14 Feb. 2020 |
Mr. KIM, Byung Seok and Mr. JUNG, Eui Young gave presentations in the poster session of 27th Korean Conference on Semiconductors (KCS2020).
​1 Jan. 2020 |
New paper about "Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite" has been published in Applied Materials Today.
​1 Jan. 2020 |
New paper about "Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors" has been published in AIP Advances.
9 Nov. 2019 |
Review paper about "Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications" has been published in Journal of Materials Research.
Lab. of Electronic-Materials Tech. & Eng. (L'ete)
Dept. of Advanced Materials Engineering for Information & Electronics, Kyung Hee University (c) 2018