전우진, "베타 붕괴를 이용한 인공신경망모사 소자 및 이에 사용되는 나노입자", KR 10-2456660 (registration on Oct. 14, 2022)
전우진, "3차원 반도체 장치 및 이의 제조 방법", KR 10-2374588 (registration on Mar. 10, 2022 / application on May 13, 2020)
전우진, "상변화 메모리 소자 및 그 제조 방법", KR 10-2163341 (registration on Sep. 29, 2020 / application on Jul. 18, 2019)
황철성， 전우진, “커패시터 소자”, KR 10-1455003 (registration on Oct. 20, 2014 / application on Jul. 22, 2013)
Sang-Soo Lee and Woojin Jeon, “PREPARATION METHOD FOR RESISTANCE SWITCHABLE CONDUCTIVE FILLER FOR RERAM”, US 8,603,854 B2 (registration on Dec. 10, 2013 / application on Apr.29, 2013)
Sang-Soo Lee and Woojin Jeon, “RESISTANCE SWITCHABLE CONDUCTIVE FILLER FOR RERAM AND ITS PREPARATION METHOD”, US 8,450,712 B2 (registration on May 28, 2013 / application on Jun. 15, 2011)
이상수， 전우진, “저항변화형 전도성 필러를 이용한 비휘발성 기억소자 및 그 제조 방법 (Resistance switchable conductive filler for ReRAM and its preparation method)”, KR 2012-0107304 (registration on Nov. 02, 2012 / application on Mar. 21, 2011)
전우진, "3차원 반도체 장치 및 이의 제조 방법", KR 10-2374588 (registration on Mar. 10, 2022 / application on May 13, 2020)
전우진, "상변화 메모리 소자 및 그 제조 방법", KR 10-2163341 (registration on Sep. 29, 2020 / application on Jul. 18, 2019)
황철성， 전우진, “커패시터 소자”, KR 10-1455003 (registration on Oct. 20, 2014 / application on Jul. 22, 2013)
Sang-Soo Lee and Woojin Jeon, “PREPARATION METHOD FOR RESISTANCE SWITCHABLE CONDUCTIVE FILLER FOR RERAM”, US 8,603,854 B2 (registration on Dec. 10, 2013 / application on Apr.29, 2013)
Sang-Soo Lee and Woojin Jeon, “RESISTANCE SWITCHABLE CONDUCTIVE FILLER FOR RERAM AND ITS PREPARATION METHOD”, US 8,450,712 B2 (registration on May 28, 2013 / application on Jun. 15, 2011)
이상수， 전우진, “저항변화형 전도성 필러를 이용한 비휘발성 기억소자 및 그 제조 방법 (Resistance switchable conductive filler for ReRAM and its preparation method)”, KR 2012-0107304 (registration on Nov. 02, 2012 / application on Mar. 21, 2011)
