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Novel FETs fabrication with 2D (graphene, TMDCs, …) and high-k materials
Representative Papers
Advanced Materials 29(47) 1703031 (2017) ACS Nano 10(7) 6659 (2016) |
[FET with channel layer using 2D material]
[Graphene-FET with high-k dielectric]
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[Organic-Inorganic hybrid resistance switching material for transparent & flexible RRAM]
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Extremely low power-consumption technology of semiconductor for IoT
Representative Papers
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Flexible and transparent system for wearable device application
Representative Papers
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[Mechanical properties of polymer RRAM]
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[MIM capacitor for next-generation DRAM application]
[Vertical integration for memory devices]
[Spin-torque-transfer MRAM]
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Next-generation memory applications (DRAM, Flash memory, resistance-switching memory...)
Representative Papers
IEEE Transactions on Electron Devices 65(2) 660 (2018) Physica Status Solidi RRL 9(7) 410 (2015) ACS Applied Materials & Interfaces 6(23) 21632 (2014) ACS Applied Materials & Interfaces 6(10) 7910 (2014) |
